| PART |
Description |
Maker |
| 2SCR542F3TL |
NPN 3.0A 30V Middle Power Transistor
|
ROHM
|
| RQ5E040AJ |
Nch 30V 4A Middle Power MOSFET
|
Rohm
|
| RSS090N03FRA |
Nch 30V 9A Middle Power MOSFET
|
Rohm
|
| RQ3E100BN |
Nch 30V 10A Middle Power MOSFET
|
Rohm
|
| RS1E200BN |
Nch 30V 20A Middle Power MOSFET
|
Rohm
|
| HS8K1 |
30V Nch plus Nch Middle Power MOSFET
|
Rohm
|
| 2SCR533D 2SCR533PT100 |
NPN 3.0A 50V Middle Power Transistor
|
Rohm
|
| 2SCR341QTR |
NPN 100mA 400V Middle Power Transistor
|
ROHM
|
| OP793 OP798 |
NPN Pho to tran sis tor with Base- Emitter Resistor
|
OPTEK Technologies
|
| CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772
Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
| NESG2101M16 NESG2101M16-T3 |
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR 邻舍npn型硅锗高频陈德良SIS的职权范
|
NEC, Corp.
NEC[NEC]
|
